Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

High-resolution multiphoton laser-induced fluorescence spectroscopy of zinc atoms ejected from laser-irradiated ZnS crystals

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.343406· OSTI ID:6571593
Time-of-flight (TOF) measurements employing high-resolution multiphoton laser-induced fluorescence spectroscopy (LFS) have been used as a probe to determine the yield and velocity distributions of Zn atoms ejected from a ZnS single crystal under irradiation by 308-nm photons. For fluences between 20 and 80 mJ/cm/sup 2/ (irradiated area 2 mm/sup 2/), the velocity distributions could be fitted by Maxwell--Boltzmann distributions where the characteristic temperature increased from 2000 to 9000 K, respectively. The absolute neutral Zn yield also increased from 10/sup 8/ to 10/sup 12/ atoms per pulse over this same fluence range. Plots of temperature (T) as a function of fluence (F) and yield as a function of 1/T and 1/F suggest thermal evaporation as the mechanism for the Zn emission.The results indicate that with increasing fluence a critical combination of particle density and laser intensity is reached for formation of a plasma which interacts with the surface to cause catastrophic failure. For consecutive laser shots at constant ablation laser fluences, a nearly exponential increase of the Zn particle density was observed, although the measured kinetic temperature remains approximately constant even beyond the onset of visible damage to the ZnS surface. Doppler-shift techniques have been combined with TOF measurements for the first time in order to separate prompt from delayed emission of ablated atoms as well as to probe possible molecular or cluster ejection and fragmentation. Evidence for the latter phenomena was obtained.
Research Organization:
Materials Science, Chemistry, and Chemical Technology Divisions, Argonne National Laboratory, Argonne, Illinois 60439
OSTI ID:
6571593
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 65:1; ISSN JAPIA
Country of Publication:
United States
Language:
English