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Superconducting properties of Mo/Si multilayer films

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.342931· OSTI ID:6569432
Multilayered Mo/Si thin films have been prepared by dual rf-magnetron sputtering technique, and the superconducting transition temperature T/sub c/ and the upper critical field H/sub c//sub =/ have been examined by resistance measurements. X-ray diffractometry shows that for the modulation wavelength lambda shorter than 3 nm both Mo and Si sublayers are amorphous, while for lambda longer than 3 nm, crystalline bcc structures appear in Mo sublayers. The lambda dependence of T/sub c/ of the multilayer films with equal sublayer thickness shows that T/sub c/ takes a maximum value of 6.1 K for lambda = 2.3 nm and approaches the T/sub c/ value of amorphous Mo/sub 56/Si/sub 44/ in the small lambda limit. The superconductivity of the multilayers has been confirmed to result from amorphous MoSi phase formed in the interfacial region of the sublayers. The thickness of the superconducting amorphous layer is estimated to be about 3 nm from the lambda dependence of T/sub c/ and from the result of the anisotropy of H/sub c//sub =/ . Keeping the Mo sublayer thickness less than 2.4 nm to suppress the appearance of the crystalline Mo and increasing the Si sublayer thickness to reduce the interlayer Josephson coupling, an ideal quasi-two-dimensional superconductor with dH/sub c//sub >2//sub parallel//sub =/ /dT as high as 180 kOe/K has been realized.
Research Organization:
Institute for Materials Research, Tohoku University, Sendai 980, Japan
OSTI ID:
6569432
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 65:4; ISSN JAPIA
Country of Publication:
United States
Language:
English