Magnetic modulations of optical and transport properties of N-doped coupled double quantum wells

Conference · Sat Aug 01 00:00:00 EDT 1998

OSTI ID:656771

Lyo, S K; Simmons, J A ^[1]; Huang, D ^[2]; Harff, N E ^[3]

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1. Sandia National Labs., Albuquerque, NM (United States)
2. Air Force Research Lab., Albuquerque, NM (United States)
3. Max Planck Inst., Stuttgart (Germany)

Magnetoquantum resistance (MR) in a perpendicular magnetic field (B{sub {perpendicular}}) and photoluminescence (PL) spectra are shown to be sensitively modulated by an in-plane field (B{sub {parallel}}) due to the B{sub {parallel}}-induced anticrossing of the energy-dispersion curves of the two quantum wells (QWs). Using a self-consistent density functional theory, they find very different B{sub {parallel}}-evolutions of the PL spectra for symmetric and asymmetric double QWs consistent with recent data. The MR is calculated using a linear response theory. The results consist of a superposition of two series of MR oscillations represented by ridges running nearly perpendicular to each other in the B = (B{sub {parallel}}, B{sub {perpendicular}}) plane. The data from GaAs/AlGaAs double QWs agree with this behavior.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE Office of Financial Management and Controller, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 656771
• Report Number(s): SAND--98-1066C; CONF-980829--; ON: DE98006172; BR: YNO100000
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
GALLIUM ARSENIDES
MAGNETIC FIELDS
MAGNETORESISTANCE
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS