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Title: Phonon-wind-driven transport of photoexcited carriers in a semiconductor quantum well

Journal Article · · Phys. Rev. B: Condens. Matter; (United States)

The in-plane transport of photoexcited carriers in GaAsAl/sub 0.3/Ga/sub 0.7/As multiple quantum wells is measured optically with 10 ps and 4 ..mu..m resolution. The local carrier density is measured by the bleaching of the excitonic absorption line. The expansion of the photoexcited carriers following a 6-ps pump pulse is found to be a strong function of excitation power and ambient temperature. At low powers, with initial carrier densities n/sub 0/less than or equal to2 x 10/sup 11/ cm/sup -2/, the spatial distribution is well described by a single expanding Gaussian profile corresponding to an effective diffusion constant D/sub e//sub f//sub f/(n/sub 0/,T). The power and temperature dependence suggests a phonon-wind driving mechanism. At higher densities (n/sub 0/>2 x 10/sup 11/ cm/sup -2/) a narrow spatial profile appears which we attribute to ''thermal confinement'' of carriers within a phonon hot spot. After some delay, the ''confined''-carrier distribution is observed to undergo a rapid expansion. This unusual effect is attributed to the ''explosion'' of the phonon hot spot, as predicted by Kazakovtsev and Levinson.

Research Organization:
Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
OSTI ID:
6567452
Journal Information:
Phys. Rev. B: Condens. Matter; (United States), Vol. 39:3
Country of Publication:
United States
Language:
English