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Extreme-ultraviolet illumination effects on the PBFA-I magnetically insulated ion diode

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.343126· OSTI ID:6567282
We have examined the effect of illuminating the anode in the Applied-B ion diode in Sandia's PBFA-I accelerator with 60--100 kW/cm/sup 2/ of extreme-ultraviolet (XUV) photons a few hundred nanoseconds prior to the accelerator shot. We find that XUV illumination significantly shortens the turn-on time of the ion beam, especially under conditions in which the normal ''flashover'' ion-source mechanisms are suppressed. In addition to the anticipated XUV photodesorption and photoionization of the anode material, some of the improvement seen with XUV illumination may be due to photoejection of electrons from the power feeds and their subsequent interaction with the anode source. Also, XUV illumination of a fine polypropylene weave located at the virtual cathode radius can preform the virtual cathode, dramatically reducing the turn-on time of the ion beam in the diode.
Research Organization:
Sandia National Laboratories, Albuquerque, New Mexico 87185
OSTI ID:
6567282
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 65:2; ISSN JAPIA
Country of Publication:
United States
Language:
English