Growth and characteristics of neodymium doped bismuth silicate crystals

Journal Article · Sun Jan 01 00:00:00 EST 1995 · Materials Research Bulletin; (United States)

DOI:https://doi.org/10.1016/0025-5408(94)00102-2· OSTI ID:6546541

Katsumata, T; Hanamori, K; Akiyama, Y ^[1]; Nobe, Y ^[2]

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1. Toyo Univ., Saitama (Japan). Dept. of Applied Chemistry
2. Mitsui Mining and Smelting Co. Ltd., Saitama (Japan). R and D Center

The melting temperatures, the lattice parameters and the optical properties of Nd doped Bi[sub 12]SiO[sub 20] have been studied for the diode pumped laser applications. The lattice parameters and the melting temperatures decrease from 10.1055 to 10.1035 [angstrom] and from 900 to 890 C with Nd[sub 2]O[sub 3] concentration from 0 to 5 mol%. The crystals grown by Czochralski technique are transparent up to [lambda] = 500 nm. The width of the optical absorption peak due to Nd[sup 3+] ion ([lambda] = 815 nm) is broader than that of Nd doped Y[sub 3]Al[sub 5]O[sub 12]. Segregation coefficient of Nd is estimated to be about k = 0.17. The solubility limit of Nd[sub 2]O[sub 3] into Bi[sub 12]SiO[sub 20] is also suggested to be about 5 mol%.

• OSTI ID: 6546541
• Journal Information: Materials Research Bulletin; (United States), Vol. 30:1; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
BISMUTH OXIDES
CRYSTAL STRUCTURE
MELTING POINTS
OPTICAL PROPERTIES
NEODYMIUM OXIDES
SEMICONDUCTOR LASERS
LASER MATERIALS
SILICON OXIDES
CRYSTAL GROWTH
DOPED MATERIALS
ELECTRON BEAM PUMPING
BISMUTH COMPOUNDS
CHALCOGENIDES
ELECTRICAL PUMPING
LASERS
MATERIALS
NEODYMIUM COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PUMPING
RARE EARTH COMPOUNDS
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SOLID STATE LASERS
THERMODYNAMIC PROPERTIES
TRANSITION TEMPERATURE
360200* - Ceramics
Cermets
& Refractories
426002 - Engineering- Lasers & Masers- (1990-)