Hardened MNOS/SOS electrically reprogrammable nonvolatile memory

Conference · Thu Dec 01 04:00:00 EST 1977 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:6545806

Cricchi, J R ^[1]; Fitzpatrick, M D; Blaha, F C; Ahlport, B T

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1. Westinghouse Electric Corp., Baltimore, MD

A random access 256 x 4 MNOS/SOS nonvolatile memory has been designed, processed, and characterized. Significant advances have been made in radiation hard low power MNOS/SOS technology by the development of nitride-oxide memory devices and high voltage p-enhancement and n- depletion mode devices used in complementary symmetry circuits. This CMOS compatible memory dissipates less than 300 MW with a read access time of less than 400 nsec at total dose levels near 500/sup 0/K rads (Si). The balanced memory detection and read enhancement features help assure long term data retention through total dose and transient radiation environments. Temperature-bias stability has been demonstrated.

• OSTI ID: 6545806
• Conference Information: Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: NS-24:6
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DESIGN
ELECTRONIC CIRCUITS
HARDENING
INTEGRATED CIRCUITS
MICROELECTRONIC CIRCUITS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SPECIFICATIONS