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Algorithms for the self-consistent simulation of high power klystrons

Conference · · AIP Conf. Proc.; (United States)
OSTI ID:6545041
We discuss an improvement to the algorithm developed by Yu/sup 1/ for modelling rf cavities in klystrons using the port approximation. In this method, the cavity is simulated by imposing an rf voltage as a boundary condition across the outer wall. The voltage and phase are chosen to be consistent with the cavity impedance and with the rf current induced by the electron beam. In the original method, each cavity was calculated successively using either linear theory or an iterative method to achieve a self-consistent voltage. The new method relaxes the voltage and phase of several cavities simultaneously during the simulation. The time dependence of the voltages are calculated from a relaxation equation. The new algorithm reduces the total computation time by about a factor of five for a complete klystron.
Research Organization:
Stanford Linear Accelerator Center, Stanford, California, 94309
OSTI ID:
6545041
Report Number(s):
CONF-880175-
Conference Information:
Journal Name: AIP Conf. Proc.; (United States) Journal Volume: 177:1
Country of Publication:
United States
Language:
English