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Title: Time-resolved x-ray diffraction measurement of the temperature and temperature gradients in silicon during pulsed laser annealing

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.93880· OSTI ID:6541102

Nanosecond resolution time-resolved x-ray diffraction measurements have been used to study the temperature and temperature gradients in <100> and <111> oriented silicon crsytals during pulsed laser annealing. Thermal strain analysis of time-resolved extended Bragg scattering has shown the lattice temperature to reach the melting point during 15-ns, 1.5-J/cm/sup 2/ ruby laser pulses and to remain at the melting point during the high reflectivity phase (HRP). The temperature gradients at the liquid-solid interface were found to be in the range of approx.10/sup 7/ K/cm during the HRP.

Research Organization:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
DOE Contract Number:
W-7405-ENG-26
OSTI ID:
6541102
Journal Information:
Appl. Phys. Lett.; (United States), Vol. 42:3
Country of Publication:
United States
Language:
English