Silicon ingot casting-heat exchanger method multi-wire slicing-fixed abrasive slicing technique. Phase III. Silicon sheet growth development for the large area sheet task of the low-cost solar array project. Quarterly progress report No. 1, December 15--December 31, 1978

Technical Report · Mon Jan 01 04:00:00 EST 1979

OSTI ID:6535132

Schmid, F; Khattak, C P

In the area of ingot casting the proof of concept of HEM was established in Phase I. During Phase II it was established that HEM cast silicon yields solar cell performance comparable to Czochralski grown material. Solar cells with conversion efficiencies of up to 15% have been fabricated. In addition it has been shown that square cross-section ingots can be cast. During Phase III of the program it is intended to scale-up the process. In the area of crystal slicing during Phase I it was established that silicon can be sliced efficiently with the FAST approach. This concept was carried forward to 10 cm diameter workpiece during Phase II. It is intended to demonstrate during Phase III that 10 cm x 10 cm cross-section silicon ingots can be sliced to achieve 25 wafers per cm with minimum kerf.

• Research Organization: Crystal Systems, Inc., Salem, MA (USA)
• DOE Contract Number: NAS-7-100-954373
• OSTI ID: 6535132
• Report Number(s): DOE/JPL/954373-9
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
ABRASIVES
CASTING
CUTTING
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELEMENTS
EXPERIMENT PLANNING
FABRICATION
HEAT EXCHANGERS
MACHINING
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PLANNING
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS