Chemically deposited Sb{sub 2}S{sub 3} and Sb{sub 2}S{sub 3}-CuS thin films
- Univ. Nacional Autonoma de Mexico, Temixco (Mexico)
Thin films of antimony sulfide have been deposited from chemical baths containing antimony trichloride and sodium thiosulfate maintained at 10 C. Upon annealing in nitrogen at 300 C for 1 h, the films become photosensitive with photo- to dark-current ratio of two to three orders of magnitude at 2 kW/m{sup 2} tungsten halogen radiation. The annealed films are crystalline with an X-ray diffraction pattern matching that of stibnite, Sb{sub 2}S{sub 3}, (JCPDS 6-0474) and show an optical bandgap of 1.78 eV. Deposition of a thin film of CuS on the antimony sulfide thin film and subsequent annealing in nitrogen at 250 C for 1 h produces films with acceptable solar control characteristics: integrated visible transmittance, T{sub vis}, 15%; integrated visible reflectance, R{sub vis}, 12%; integrated infrared transmittance, T{sub ir}, 14%; integrated infrared reflectance, R{sub ir}, 36%; and a shading coefficient of about 0.35. The X-ray diffraction patterns of the annealed Sb{sub 2}S{sub 3}-CuS thin films indicate the formation of a ternary compound with the structure of famatinite, Cu{sub 3}SbS{sub 4}.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 653357
- Journal Information:
- Journal of the Electrochemical Society, Vol. 145, Issue 6; Other Information: PBD: Jun 1998
- Country of Publication:
- United States
- Language:
- English
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