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Structural and microstructural aspects of Si{sub x}(Ta,Nb)Te{sub 2}

Journal Article · · Journal of Solid State Chemistry
 [1]; ;  [1];  [2]
  1. Univ. of Antwerp (Belgium)
  2. Aristotle Univ. of Thessaloniki (Greece)
The modulated structures of the compounds of the type A{sub x}M Te{sub 2} (M = Nb, Ta; A = Si, Ge) are discussed, and the electron diffraction patterns and high-resolution electron microscopy images are analyzed in terms of interface modulated structures. The structure of Si{sub x}TaTe{sub 2} (x {approx} 1/3) is of particular interest; it results from the presence of periodic interfaces of two types leading to an incommensurately looking diffraction pattern with a q-vector slightly larger than c{sub 0}{sup *}/3. A domain microstructure consisting of three orientation variants and three translation variants is revealed and interpreted in terms of the crystal structure. The domains are assumed to result from an order-disorder transition. In Si{sub x}NbTe{sub 2} (x = 3/7), different long period structures with long periods 7c{sub 0}, 8c{sub 0} and 9c{sub 0} are formed. Possible models are discussed.
OSTI ID:
653133
Journal Information:
Journal of Solid State Chemistry, Journal Name: Journal of Solid State Chemistry Journal Issue: 1 Vol. 139; ISSN 0022-4596; ISSN JSSCBI
Country of Publication:
United States
Language:
English