Photothermal mapping of defects in the study of builk damage in KDP
Interest in producing high-damage-threshold KH{sub 2}PO{sub 4} (KDP) and (D{sub x}H{sub 1-x}){sub 2}PO{sub 4} (DKDP) for frequency conversion and optical switching applications is driven by the requirements of the National Ignition Facility (NIF) at the Lawrence Livermore National Laboratory (LLNL). At present only the best crystals meet the NIF system requirements at the third harmonic (351 nm) and only after a laser conditioning process. Neither the mechanism for damage in bulk KDP nor the mechanism for conditioning is understood. As part of a development effort to increase the damage thresholds of KDP and DKDP, we have been developing a diagnostic tool that will find these locations, we will use other measurement techniques to determine how these locations differ from the surrounding material and why they cause damage. This will allow crystal growers to focus their efforts during the growth process in improving damage thresholds.
- Research Organization:
- Lawrence Livermore National Lab., CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 652972
- Report Number(s):
- UCRL-JC--128353; CONF-9710116--; ON: DE98052074; BR: DP0212000
- Country of Publication:
- United States
- Language:
- English
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