Transient photoconductivity studies of the light soaked state of hydrogenated amorphous silicon

Journal Article · Tue Mar 15 00:00:00 EST 1983 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93984· OSTI ID:6525755

Street, R A

Studies of transient photoconductivity show that the primary effect of light soaking in hydrogenated amorphous silicon is to introduce dangling bonds of bulk density 10/sup 16/--10/sup 17/ cm/sup -3/. Light soaking reduces the ..mu..tau product of both electrons and holes to values which are quantitatively related to the observed increase in the dangling bond electron spin resonance (ESR) spin density. In addition, no change in the carrier drift mobilities is detected after light soaking.

• Research Organization: Xerox Palo Alto Research Center, Palo Alto, California 94304
• DOE Contract Number: AC02-77CH00178
• OSTI ID: 6525755
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 42:6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILANES
AMORPHOUS STATE
PHOTOCONDUCTIVITY
CARRIER MOBILITY
CHEMICAL BONDS
ELECTRON SPIN RESONANCE
ELECTRONS
EXPERIMENTAL DATA
HOLES
TRANSIENTS
DATA
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTARY PARTICLES
FERMIONS
HYDRIDES
HYDROGEN COMPOUNDS
INFORMATION
LEPTONS
MAGNETIC RESONANCE
MOBILITY
NUMERICAL DATA
PHYSICAL PROPERTIES
RESONANCE
SILICON COMPOUNDS
360603* - Materials- Properties