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Growth of untwinned Bi sub 2 Sr sub 2 Ca sub 2 Cu sub 3 O sub x thin films by atomically layered epitaxy

Journal Article · · Applied Physics Letters; (USA)
DOI:https://doi.org/10.1063/1.104278· OSTI ID:6522037
;  [1]; ;  [2]
  1. Varian Research Center, Palo Alto, CA (USA)
  2. Department of Electrical Engineering, Stanford University, Stanford, CA (USA)
We report the growth of untwinned epitaxial thin films of Bi-Sr-Ca-Cu-O by atomically layered heteroepitaxy on SrTiO{sub 3} substrates. These films are {ital c}-axis oriented as-layered and do not exhibit 90{degree} in-plane defects, i.e., {ital a}-{ital b} twinning.'' By misorienting the surface normal from {l brace}100{r brace} by approximately 4{degree} towards {l angle}111{r angle}, the cubic symmetry of the {l brace}100{r brace} surface is adequately broken to completely align the {ital b} axis of the superconducting film with respect to the substrate. Reflection high-energy electron diffraction patterns observed during growth and post-growth x-ray diffraction analysis indicate that the incommensurate structural modulation occurs along the same direction as the step edges.
OSTI ID:
6522037
Journal Information:
Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:10; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English