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High-field properties and scaling in CVD-prepared Nb/sub 3/Ge

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.326021· OSTI ID:6517849
The upper critical field H/sub c/2 and the field-dependent critical current density J/sub c/(H) have been determined for high-T/sub c/ Nb/sub 3/Ge prepared by the chemical vapor deposition (CVD) process. Measurements were performed on short samples taken from long lengths (approx.10 m) of Nb/sub 3/Ge deposited under various conditions onto metallic substrates. Using the theory of Hohenberg and Werthamer for dirty type-II superconductors, values of H/sub c/2(0) were extrapolated from resistive measurements of H/sub c/2 near T/sub c/. Values of H/sub c/2(0) ranged from 32.2 to 33.1 T, the highest upper critical field reported for bulk Nb/sub 3/Ge. From measurements of J/sub c/(H), pinning force densities F/sub p/ were calculated and compared to the Kramer model of flux pinning which predicts certain scaling laws for F/sub p/. We have tested for these scaling laws and have found qualitative agreement with the model of Kramer. This represents the first demonstration of such scaling in bulk high-T/sub c/ Nb/sub 3/Ge. In addition, values of the flux line lattice shearing parameter K/sub s/ have been extracted from our data and are found to be in quantitative agreement with Kramer's predictions.
Research Organization:
Los Alamos Scientific Laboratory, Los Alamos, New Mexico 87545
OSTI ID:
6517849
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 50:2; ISSN JAPIA
Country of Publication:
United States
Language:
English