Gas bubble and damage microstructure in helium implanted nickel. [20 and 500 keV/sup 4/ He/sup +/]

Conference · Sun Jan 01 04:00:00 EST 1978

OSTI ID:6516427

Kaminsky, M; Das, S K; Fenske, G

Transmission electron microscopy has been used to study the depth distribution of bubbles (or voids) and dislocation damage in nickel irradiated at 500/sup 0/C with 20- and 500-keV /sup 4/He/sup +/ ions to total doses ranging from 2.9 x 10/sup 15/ to 5 x 10/sup 17/ ions/cm/sup 2/. The size, number density, and volume fraction of bubbles (or voids) were measured from micrographs taken from samples sectioned parallel to the surface normal. The results for 500-keV irradiation show that the peaks in the depth distribution of number density and of volume fraction (i.e., swelling) of bubbles (or voids) are approx. 20% deeper than the calculated projected range distribution. However, for 20-keV irradiation the peak in the swellig occurs at a depth which is about a factor of two larger than the peak in the distributions of projected range and the energy deposited into damage as calculated according to Brice. The peak positions are nearly independent of the total doses used in these studies. The implications of these results for the blistering mechanisms are discussed.

• Research Organization: Argonne National Lab., IL (USA)
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 6516427
• Report Number(s): CONF-780851-4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360106* -- Metals & Alloys-- Radiation Effects
ANNEALING
BUBBLES
CHANNELING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DENSITY
DEPOSITION
DISLOCATIONS
ELECTRODEPOSITION
ELECTROLYSIS
ELECTRON MICROSCOPY
ELECTROPLATING
ELEMENTS
ENERGY RANGE
FABRICATION
HEAT TREATMENTS
HELIUM IONS
HIGH TEMPERATURE
ION CHANNELING
KEV RANGE
KEV RANGE 10-100
KEV RANGE 100-1000
LINE DEFECTS
LYSIS
METALS
MICROSCOPY
MICROSTRUCTURE
NICKEL
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PLATING
RADIATION EFFECTS
SIZE
SURFACE COATING
SWELLING
TRANSITION ELEMENTS
TRANSMISSION ELECTRON MICROSCOPY
VOIDS