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Title: High T/sub c/ superconducting B1 phase MoN films prepared by low-energy ion-assisted deposition

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.339787· OSTI ID:6511549

Metastable B1 phase MoN was synthesized by low-energy ion-assisted thin-film growth techniques at deposition temperatures T/sub D/ = 400, 500, and 700/sup 0/C. The films were condensed under the action of mixed Ar/sup +/ and N/sub 2//sup +/ ion species at an ion to condensing atom arrival rate ratio of 1.0. For each deposition temperature, films were prepared at various ion energies in the range 2--200 eV. The presence of chemically reactive N/sub 2//sup +/ ions and the use of low ion energies allow both structural and chemical selectivity, facilitate increased incorporation of nitrogen, and promote ordering of the defect structure of cubic MoN. The films were characterized by x-ray diffraction, by measurements of superconducting temperature T/sub c/ and by temperature-dependent resistivity rho(T). Collectively the film properties strongly depend on ion energy and deposition temperature. The composition, lattice parameter, crystalline preferred orientation, and grain size can be controlled by varying ion energy. The resistivity shows an anomalous temperature dependence that is typical of disordered metals, i.e., electron localization governs electrical conduction with the temperature coefficient of resistivity changing sign according to the Mooij correlation. At optimum deposition conditions the resistivity is metallike (phonon contribution rho/sub thermal/ >0), T/sub c/ = 6.2 K, the resistivity ratio RR = 1.1, and rho/sub 300//sub //sub K/ = 120 ..mu cap omega.. cm. Annealing of films at 700/sup 0/C causes an improvement in properties with T/sub c/approx. =12 K, RR = 1.7, and rho/sub thermal/ = 60--80 ..mu cap omega.. cm.

Research Organization:
CSIRO Division of Applied Physics, Sidney, Australia 2070
OSTI ID:
6511549
Journal Information:
J. Appl. Phys.; (United States), Vol. 62:2
Country of Publication:
United States
Language:
English