Third-Born-approximation effects in electron capture
We have calculated corrections to the strong-potential Born approximation using the distorted-wave Born formalism of Taulbjerg and Briggs. In the sense of a plane-wave Born expansion, all terms of the third Born approximation, and all ''single switching'' fourth Born terms are included, but a peaking approximation is needed to reduce the calculation to tractable form. We believe this to be the first calculation to be so complete in the Born sense. Effects of the higher terms are most visible in the valley between the Thomas peak and the forward peak. The Thomas peak is visible in the correction term even though it includes no second Born contributions. We suggest that this may be interpreted as a third Born effect with two ''hard'' collisions followed by a ''soft'' collision.
- Research Organization:
- Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701
- OSTI ID:
- 6511415
- Journal Information:
- Phys. Rev. A; (United States), Journal Name: Phys. Rev. A; (United States) Vol. 35:11; ISSN PLRAA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
Molecular & Chemical Physics-- Collision Phenomena
74 ATOMIC AND MOLECULAR PHYSICS
ATOM COLLISIONS
BORN APPROXIMATION
CAPTURE
CATIONS
CHARGED PARTICLES
COLLISIONS
CORRECTIONS
CROSS SECTIONS
DIFFERENTIAL CROSS SECTIONS
ELECTRON CAPTURE
ELEMENTS
ENERGY DEPENDENCE
ENERGY RANGE
HYDROGEN
HYDROGEN IONS
HYDROGEN IONS 1 PLUS
ION COLLISIONS
ION-ATOM COLLISIONS
IONS
MEV RANGE
MEV RANGE 10-100
NONMETALS