Raman study of an epitaxial GaAs layer on a Si (100) substrate

Journal Article · Mon Jul 20 00:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98919· OSTI ID:6511349

Huang, Y; Yu, P Y; Charasse, M; Lo, Y; Wang, S

A bevel has been etched in a GaAs epitaxial film grown on a Si substrate, so that the Raman spectrum of the GaAs layers can be measured as a function of distance from the GaAs/Si interface. The amount of strain and disorder in the GaAs film has been estimated from the GaAs longitudinal optical phonon line shape and frequency. Both the strain and the amount of disorder were found to decrease with increase in the distance from the interface.

• Research Organization: Department of Physics, University of California and Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6511349
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 51:3
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
CRYSTAL STRUCTURE
RAMAN SPECTROSCOPY
STRAINS
EPITAXY
ETCHING
EXPERIMENTAL DATA
INTERFACES
LAYERS
ORDER-DISORDER TRANSFORMATIONS
PHONONS
SILICON
ARSENIC COMPOUNDS
ARSENIDES
DATA
ELEMENTS
GALLIUM COMPOUNDS
INFORMATION
LASER SPECTROSCOPY
NUMERICAL DATA
PHASE TRANSFORMATIONS
PNICTIDES
QUASI PARTICLES
SEMIMETALS
SPECTROSCOPY
SURFACE FINISHING
360603* - Materials- Properties
360602 - Other Materials- Structure & Phase Studies