Kinetics of high concentration arsenic deactivation at moderate to low temperatures

Conference · Wed Oct 14 04:00:00 EDT 1992

OSTI ID:6508571

Luning, S; Rousseau, P M; Griffin, P B; Plummer, J D ^[1]; Carey, P G ^[2]

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1. Stanford Univ., CA (United States). Center for Integrated Systems
2. Lawrence Livermore National Lab., CA (United States)

This work investigates the kinetics of arsenic deactivation at temperatures from 500 to 800[degrees]C and for concentrations between 1 x 10[sup 20] and 1 x 10[sup 21]/cm[sup 3]. Using profiles created by repeated laser melt annealing, the authors determine mobility as a function of both active and inactive dopant concentration and then characterize the dynamics of carrier deactivation. Retrograde resistivity versus concentration was observed at high doses, which is explained by a mobility reduction due to the inactive arsenic and by retrograde electrical activity of the dopant itself.

• Research Organization: Lawrence Livermore National Lab., CA (United States)
• Sponsoring Organization: DOE; USDOE, Washington, DC (United States)
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 6508571
• Report Number(s): UCRL-JC-111945; CONF-921204--2; ON: DE93013349
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400400 -- Electrochemistry
42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ANNEALING
ARSENIC
CARRIER MOBILITY
DATA
DEACTIVATION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
ELEMENTS
EXPERIMENTAL DATA
HEAT TREATMENTS
INFORMATION
INTEGRATED CIRCUITS
KINETICS
MATERIALS
MICROELECTRONIC CIRCUITS
MOBILITY
NUMERICAL DATA
PHYSICAL PROPERTIES
REACTION KINETICS
SEMICONDUCTOR MATERIALS
SEMIMETALS
TEMPERATURE EFFECTS