Island-size scaling in surface deposition processes
Journal Article
·
· Physical Review, B: Condensed Matter; (United States)
- Institute for Physical Research and Technology, Iowa State University, Ames, Iowa 50011 (United States)
- Ames Laboratory and Department of Physics, Iowa State University, Ames, Iowa 50011 (United States)
- Department of Mathematics and Ames Laboratory, Iowa State University, Ames, Iowa 50011 (United States)
Diffusion-mediated nucleation and growth of islands during deposition occurs essentially irreversibly in a variety of systems. We provide a scaling theory for the full island-size distribution, both with the ratio of surface diffusion to deposition rates and with time. Scaling functions and exponents are determined by simulation and explained analytically by an unconventional rate-equation analysis. Experimental tests for theoretical predictions are discussed, including the scaling of superlattice beam profiles for diffraction studies of heteroepitaxial systems.
- DOE Contract Number:
- W-7405-ENG-82
- OSTI ID:
- 6496575
- Journal Information:
- Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 47:20; ISSN PRBMDO; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
665000* -- Physics of Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ADSORPTION
CHEMICAL REACTIONS
CHEMISORPTION
COMPUTERIZED SIMULATION
CRYSTAL GROWTH
CRYSTAL MODELS
DEPOSITION
DIFFUSION
EPITAXY
HETEROJUNCTIONS
JUNCTIONS
KINETICS
MATHEMATICAL MODELS
NUCLEATION
SCALING LAWS
SEMICONDUCTOR JUNCTIONS
SEPARATION PROCESSES
SIMULATION
SORPTION
SORPTIVE PROPERTIES
SUBSTRATES
SUPERLATTICES
SURFACE PROPERTIES
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ADSORPTION
CHEMICAL REACTIONS
CHEMISORPTION
COMPUTERIZED SIMULATION
CRYSTAL GROWTH
CRYSTAL MODELS
DEPOSITION
DIFFUSION
EPITAXY
HETEROJUNCTIONS
JUNCTIONS
KINETICS
MATHEMATICAL MODELS
NUCLEATION
SCALING LAWS
SEMICONDUCTOR JUNCTIONS
SEPARATION PROCESSES
SIMULATION
SORPTION
SORPTIVE PROPERTIES
SUBSTRATES
SUPERLATTICES
SURFACE PROPERTIES