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The emittance and brightness characteristics of negative ion sources suitable for MeV ion implantation

Conference ·
OSTI ID:6495303
This paper provides the description and beam properties of ion sources suitable for use with ion implantation devices. Particular emphasis is placed on the emittance and brightness properties of state-of-the-art, high intensity, negative ion sources based on the cesium ion sputter principle. (WRF)
Research Organization:
Oak Ridge National Lab., TN (USA)
DOE Contract Number:
AC05-84OR21400
OSTI ID:
6495303
Report Number(s):
CONF-8706112-1; ON: DE87010377
Country of Publication:
United States
Language:
English