Theory of optical nutation in direct-gap semiconductors due to ultrashort resonant laser irradiation

Journal Article · Sun Jan 01 04:00:00 EST 1989 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/3.16242· OSTI ID:6488695

Singh, K; Sen, P; Sen, P K ^[1]

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1. Dept. of Physics, Bhopal Univ., Bhopal 462 026 (IN)

Based on the time-dependent perturbation technique, analytical investigation of optical nutation has been made in direct-gap semiconductors such as GaAs, InSb, and Hg/sub 1-x/Cd/sub x/Te. The crystals are considered to be irradiated by short pulsed (in the picosecond regime) moderate power near-resonant lasers produced significant density of optically-induced free electron-hole pairs. Incoherent dephasing mechanisms have been introduced phenomenologically into the coherent radiation-semiconductor interaction model. The theory, on application to the case of a specific crystal such as Hg/sub 1-x/Cd/sub x/Te with x = 0.18, irradiated by a pulsed 10.6 lambdam CO/sub 2/ laser, manifests distinctly the occurrence of ringing behavior in the transmitted intensity, transient dispersion, and absorption even in the absence of any theoretical averaging or the consideration of the effective density of states.

• OSTI ID: 6488695
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 25:1; ISSN IEJQA
• Country of Publication: United States
• Language: English

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