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U.S. Department of Energy
Office of Scientific and Technical Information

Hydrogen gas generation utilizing a bromide electrolyte, an amorphous silicon semiconductor and radiant energy

Patent ·
OSTI ID:6478440

Radiant energy in conjunction with an n-type amorphous silicon semiconducting photoanode to at least partially power an electrolytic cell is used in the generation of hydrogen, utilizing a bromide, preferably hydrogen bromide, as the essential electrolyte component in the electrolytic cell to solve overvoltage and corrosion problems associated with the use of conventional electrolytes in similar environments. The use of the bromide electrolyte results in the broadening of the selection of semiconductor electrodes which can be used in the process and apparatus of the present invention enabling the amorphous silicon semiconducting electrode to be used with superior anticorrosive and radiant energy gathering results over conventional systems. To insure against corrosion, the amorphous silicon semiconductor should preferably be used with a thin layer of platinum overcoating. The hydrogen generated from such system can be used to power a fuel cell.

Assignee:
United Technologies Corp
Patent Number(s):
US 4236984
OSTI ID:
6478440
Country of Publication:
United States
Language:
English