Angular dependence of tunneling effects in Ba{sub 1{minus}x}K{sub x}BiO{sub 3} grain boundaries
Book
·
OSTI ID:64716
- AT and T Bell Labs., Murray Hill, NJ (United States)
- IBM T.J. Watson Research Center, Yorktown Heights, NY (United States)
- Francis Bitter National Magnet Lab., Cambridge, MA (United States)
The authors report on the tunneling properties of Ba{sub 1{minus}x}K{sub x}BiO{sub 3} (BKBO) grain boundaries prepared on bicrystal substrates. They studied symmetric tilt boundaries with 5{degree}, 24{degree}, 36.8{degree} and 45{degree} misorientation on SrTiO{sub 3}, and 24{degree} on MgO substrates. The three high angle misorientations used yield clear superconductor-insulator-superconductor behavior, with very little conductance below the bias corresponding to twice the BKBO energy gap, and a strong peak at that value. The two samples prepared on MgO yielded somewhat broader tunneling characteristics, but otherwise similar features compared to the samples prepared on SrTiO{sub 3}; they showed the lowest junction resistivity and the weakest conductance increase at high bias. The linear conductance background consistently observed in superconductor-insulator-normal metal junctions is absent in the grain boundary junctions. For the 5{degree} samples, they observe weak link behavior below {Tc}, with a critical current density of 65A/cm{sup 2}. A similar angular dependence is seen in Nd{sub 1.85}Ce{sub 0.15}CuO{sub 4{minus}{delta}}.
- OSTI ID:
- 64716
- Report Number(s):
- CONF-940142--; ISBN 0-8194-1453-0
- Country of Publication:
- United States
- Language:
- English
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