Sintering and microstructural development of metal oxide varistor ceramics
Journal Article
·
· Materials Research Bulletin; (United States)
- University of Ljubljana, (Slovenia). Jozef Stefan Institute
Anomalous retardation of the sintering kinetics of ZnO with addition of Bi[sub 4]Ti[sub 3]O[sub 12] (BIT) and a low voltage varistor composition containing ZnO, BIT, Co[sub 3]O[sub 4] and Mn[sub 2]O[sub 3] in the temperature interval between 780 and 850 C was investigated. On the basis of transmission electron microscopic analysis of diffusion couples the retardation of sintering kinetics was ascribed to surface diffusion of Bi and Ti along ZnO grain surfaces. Liquid phase formation resulting from chemical reactions between the components triggers exaggerated grain growth. Nucleation and growth of anomalous grains is influenced by the presence of inversion boundaries in ZnO grains.
- OSTI ID:
- 6470291
- Journal Information:
- Materials Research Bulletin; (United States), Journal Name: Materials Research Bulletin; (United States) Vol. 28:8; ISSN MRBUAC; ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360202 -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
BISMUTH COMPOUNDS
CERAMICS
CHALCOGENIDES
COBALT COMPOUNDS
COBALT OXIDES
ELECTRON MICROSCOPY
FABRICATION
GRAIN BOUNDARIES
GRAIN GROWTH
MANGANESE COMPOUNDS
MANGANESE OXIDES
MATERIALS
MICROSCOPY
MICROSTRUCTURE
OXIDES
OXYGEN COMPOUNDS
SEMICONDUCTOR MATERIALS
SINTERING
TEMPERATURE RANGE
TEMPERATURE RANGE 1000-4000 K
TITANATES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
TRANSMISSION ELECTRON MICROSCOPY
ZINC COMPOUNDS
ZINC OXIDES
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360202 -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
BISMUTH COMPOUNDS
CERAMICS
CHALCOGENIDES
COBALT COMPOUNDS
COBALT OXIDES
ELECTRON MICROSCOPY
FABRICATION
GRAIN BOUNDARIES
GRAIN GROWTH
MANGANESE COMPOUNDS
MANGANESE OXIDES
MATERIALS
MICROSCOPY
MICROSTRUCTURE
OXIDES
OXYGEN COMPOUNDS
SEMICONDUCTOR MATERIALS
SINTERING
TEMPERATURE RANGE
TEMPERATURE RANGE 1000-4000 K
TITANATES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
TRANSMISSION ELECTRON MICROSCOPY
ZINC COMPOUNDS
ZINC OXIDES