Strongly Anisotropic Electronic Transport at Landau Level Filling Factor [nu] =9/2 and [nu] =5/2 under a Tilted Magnetic Field
- Department of Electrical Engineering, Princeton University, Princeton, New Jersey (United States)
- NHMFL, Tallahassee, Florida (United States)
- Department of Physics, University of Utah, Salt Lake City, Utah (United States)
- Bell Labs, Lucent Technologies, Murray Hill, New Jersey (United States)
- Department of Applied Physics, Columbia University, New York, New York (United States)
We have investigated the influence of an increasing in-plane magnetic field on the states of half filling of Landau levels ([nu]=11/2, 9/2, 7/2, thinspandthinsp 5/2) of a two-dimensional electron system. In the electrically anisotropic phase at [nu]=9/2 and 11/2 an in-plane magnetic field of [approximately]1[endash]2 T overcomes its initial pinning to the crystal lattice and [ital reorients] this phase. In the initially isotropic phases at [nu]=5/2 and 7/2 an in-plane magnetic field [ital induces ] a strong electrical anisotropy. In all cases, for high in-plane fields the high-resistance axis is parallel to the direction of the in-plane field. [copyright] [ital 1999] [ital The American Physical Society ]
- OSTI ID:
- 6463402
- Journal Information:
- Physical Review Letters, Vol. 83:4; ISSN 0031-9007
- Country of Publication:
- United States
- Language:
- English
Similar Records
Exact Quantization of the Even-Denominator Fractional Quantum Hall State at {nu} =5/2 Landau Level Filling Factor
Reduction of Spin Polarization near Landau Filling Factor {nu} = 3 in GaAs/AlGaAs Quantum Wells