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Title: Strongly Anisotropic Electronic Transport at Landau Level Filling Factor [nu] =9/2 and [nu] =5/2 under a Tilted Magnetic Field

Journal Article · · Physical Review Letters
;  [1]; ;  [2];  [3]; ; ; ;  [4]; ;  [5]
  1. Department of Electrical Engineering, Princeton University, Princeton, New Jersey (United States)
  2. NHMFL, Tallahassee, Florida (United States)
  3. Department of Physics, University of Utah, Salt Lake City, Utah (United States)
  4. Bell Labs, Lucent Technologies, Murray Hill, New Jersey (United States)
  5. Department of Applied Physics, Columbia University, New York, New York (United States)

We have investigated the influence of an increasing in-plane magnetic field on the states of half filling of Landau levels ([nu]=11/2, 9/2, 7/2, thinspandthinsp 5/2) of a two-dimensional electron system. In the electrically anisotropic phase at [nu]=9/2 and 11/2 an in-plane magnetic field of [approximately]1[endash]2 T overcomes its initial pinning to the crystal lattice and [ital reorients] this phase. In the initially isotropic phases at [nu]=5/2 and 7/2 an in-plane magnetic field [ital induces ] a strong electrical anisotropy. In all cases, for high in-plane fields the high-resistance axis is parallel to the direction of the in-plane field. [copyright] [ital 1999] [ital The American Physical Society ]

OSTI ID:
6463402
Journal Information:
Physical Review Letters, Vol. 83:4; ISSN 0031-9007
Country of Publication:
United States
Language:
English