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Strain effects in Hg/sub 1-//sub x/Cd/sub x/Te (xapprox. 0. 2) photovoltaic arrays

Journal Article · · J. Vac. Sci. Technol., A; (United States)
DOI:https://doi.org/10.1116/1.576190· OSTI ID:6462403
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The effect of stress and strain on the performance of Hg/sub 1-//sub x/Cd/sub x/Te (xapprox.0.2) photovoltaic arrays was studied both in the dark and under illumination. Stress, external as well as internal, affects the current--voltage characteristic of the photodiode. The combined action of illumination and strain yields an anomalous response to light absorption in the device. A model is conceived wherein the photodiode and guard ring are treated as a metal-insulator semiconductor field effect transistor (MISFET). Stress developed in the vicinity of small contact windows causes n-type damage, which brings about a forward bias in the device. The effect of strain on the reverse current of the photodiode is explained by a change in the n-channel conductivity of the MISFET. This change is caused by charges which are due either to a piezoelectric effect or n-type damage. Using this model observed phenomena in Hg/sub 1-//sub x/Cd/sub x/Te photovoltaic arrays are explained, as due to internal stresses originating from wafer deformation.

Research Organization:
SCD--Semi-Conductor Devices, A Tadiran--Rafael Partnership, Misgav Mobile Post, 20179, Israel
OSTI ID:
6462403
Journal Information:
J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 7:2; ISSN JVTAD
Country of Publication:
United States
Language:
English

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