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Room-temperature continuous-wave operation of an AlGaInP double heterostructure laser grown by atmospheric pressure metalorganic chemical vapor deposition

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.96366· OSTI ID:6461385

Continuous-wave (cw) operation at temperatures up to 23 /sup 0/C of an Al/sub 0.26/Ga/sub 0.26/In/sub 0.48/P/Ga/sub 0.52/In/sub 0.48/P/ Al/sub 0.26/Ga/sub 0.26/In/sub 0.48/P double heterostructure (DH) laser has been achieved for the first time. The threshold current was 160 mA at 20 /sup 0/C for a device with a 10-..mu..m-wide and 250-..mu..m-long ion-implanted stripe geometry. The emission wavelength was 671 nm during cw operation at 10 /sup 0/C. To reduce thermal resistance to a heat sink, a dually stacked structure made of a thin (approx.0.3 ..mu..m) p-AlGaInP layer and a p-Al/sub 0.76/Ga/sub 0.24/As layer was used as a cladding layer. The DH wafer was grown by atmospheric pressure metalorganic chemical vapor deposition.

Research Organization:
Sony Corporation Research Center, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama 240, Japan
OSTI ID:
6461385
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 47:10; ISSN APPLA
Country of Publication:
United States
Language:
English