Radiation effects in oxynitrides grown in N[sub 2]O

Conference · Thu Dec 01 00:00:00 EST 1994 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6457158

Saks, N S ^[1]; Simons, M ^[2]; Fleetwood, D M ^[3]; Yount, J T; Lenahan, P M ^[4]; Klein, R B ^[5]

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1. Naval Research Lab., Washington, DC (United States)
2. Research Triangle Inst., Research Triangle Park, NC (United States)
3. Sandia National Labs., Albuquerque, NM (United States)
4. Pennsylvania State Univ., University Park, PA (United States)
5. SFA, Inc., Landover, MD (United States)

Over the past several decades, it has been shown that oxynitrides have several significant advantages over pure SiO[sub 2] for use as gate insulators in MOS devices. Oxynitrides have been grown by oxidation in N[sub 2]O in a standard thermal oxidation furnace. Two N[sub 2]O processes have been studied: oxidation in N[sub 2]O only, and two-step oxidation with initial oxidation in O[sub 2] followed by oxidation/nitridation in N[sub 2]O. Results are presented for radiation damage at 80 and 295K, hole trapping, interface trap creation, electron spin resonance, and hole de-trapping using thermally-stimulated current analysis. N[sub 2]O oxynitrides do not appear to have the well-known drawbacks of NH[sub 3]-annealed oxynitrides. Creation of interface traps during irradiation is reduced in the N[sub 2]O oxynitrides, with the degree of improvement depending on the fabrication process.

• OSTI ID: 6457158
• Report Number(s): CONF-940726-; CODEN: IETNAE
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Vol. 41:6Pt1; Conference: 31. annual international nuclear and space radiation effects conference, Tucson, AZ (United States), 18-22 Jul 1994; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
NITROGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
OXYGEN COMPOUNDS
SEMICONDUCTOR DEVICES
CRYSTAL DEFECTS
NITROGEN DIOXIDE
CHALCOGENIDES
CRYSTAL STRUCTURE
NITROGEN OXIDES
OXIDES
RADIATION EFFECTS
360605* - Materials- Radiation Effects
440200 - Radiation Effects on Instrument Components
Instruments
or Electronic Systems