Band-gap narrowing and III-V heterostructure FETs (Field-Effect Transistors)

Conference · Mon Jan 01 00:00:00 EST 1990

OSTI ID:6455495

Myers, D R; Lott, J A; Klem, J F; Tigges, C P ^[1]; Lowney, J R ^[2]

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1. Sandia National Labs., Albuquerque, NM (USA)
2. National Inst. of Standards and Technology (NCTL), Gaithersburg, MD (USA)

We calculate the magnitude of band-gap narrowing for GaAs-based alloys, and have included these results into one-dimensional heterojunction device models for strained In{sub 0.15}Ga{sub 0.85}As quantum-well MODulation-doped Field-Effect Transistors (MODFETs). Equivalent rigid shifts of as much as 1.2 meV are obtained for the valence band of depleted p-type Al{sub 0.15}Ga{sub 0.85}As doped at 5 {times} 10{sup 18}/cm{sup 3}. Our simulations suggest that band-gap narrowing is most significant for p-channel MODFETs. The predicted effect of band-gap narrowing in p-channel MODFETs is the formation of parasitic conduction in the low-mobility parent dopant region. The parasitic conduction would reduce the intrinsic gain. 13 refs., 4 figs.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• Sponsoring Organization: DOE/DP
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6455495
• Report Number(s): SAND-90-1911C; CONF-901244-1; ON: DE91000401
• Resource Relation: Conference: 1990 international electron device conference, San Francisco, CA (USA), 10-12 Dec 1990
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
ENERGY GAP
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
INDIUM ARSENIDES
BAND THEORY
SEMICONDUCTOR MATERIALS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
MATERIALS
PNICTIDES
SEMICONDUCTOR DEVICES
TRANSISTORS
360603* - Materials- Properties