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NbN materials development for practical superconducting devices

Conference ·
OSTI ID:6454059
Power switches such as a Superconducting Fault Current Limiter require large cross sectional area superconductors with both high critical current density J/sub c/ and normal state resistivity rho/sub n/. Large values of J/sub c/ and rho/sub n/ have been previously reported in small cross sectional area weak links of NbN. We report on reactively sputtered NbN films up to 5 ..mu..m thick and 2.2 cm wide which have rho/sub n/ > 200 ..mu cap omega.. cm and a self-field J/sub c/ up to 10/sup 6/ A/cm/sup 2/. Severe degradation in J/sub c/ was observed with increasing film width and for millisecond current pulses. This degradation could be substantially reduced by stabilization with either low rho/sub n/ normal metal or the use of a sapphire substrate. The resistivity and critical current dependence both imply Josephson coupled grains and the results will be discussed within that model.
Research Organization:
Argonne National Lab., IL (USA)
DOE Contract Number:
W-31109-ENG-38
OSTI ID:
6454059
Report Number(s):
CONF-800980-38; ON: DE81023891
Country of Publication:
United States
Language:
English