3d photoemission study of the intermediate valence of Sm on Si(001)

Journal Article · Wed Jan 15 04:00:00 EST 1986 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.33.1424· OSTI ID:6449137

Faldt,; Myers, H P

Overlayers of Sm on Si(001) were studied by x-ray photoemission spectroscopy and low-energy electron diffraction. Divalent Sm was observed in the low-coverage region while an average valence of approx.2.75 was observed for monolayer coverage. It is concluded that except for very low coverages the variation of the Sm valence is controlled by direct Sm-Sm interaction. A comparison between the Sm-coverage dependence of 3d spectra and previously obtained 4f spectra gives further evidence to the view that photoemission from Sm core levels gives reliable information about the valence.

• Research Organization: Department of Physics, Chalmers University of Technology, S-41296 Gothenburg, Sweden
• OSTI ID: 6449137
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 33:2; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360104* -- Metals & Alloys-- Physical Properties
COHERENT SCATTERING
DIFFRACTION
ELECTROMAGNETIC RADIATION
ELECTRON DIFFRACTION
ELEMENTS
EMISSION
IONIZING RADIATIONS
METALS
PHOTOEMISSION
RADIATIONS
RARE EARTHS
SAMARIUM
SCATTERING
SECONDARY EMISSION
SEMIMETALS
SILICON
SORPTION
SORPTIVE PROPERTIES
SURFACE PROPERTIES
VALENCE
X RADIATION