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Title: The effects of high temperature and total dose gamma radiation on a power MOSFET (metal-oxide semiconductor field effect transistor) (N-channel) and an operational amplifier

Conference ·
OSTI ID:6446289

Little data exists on the effects of high temperature (> 125/sup 0/C) and/or total accumulated gamma doses exceeding 10 Megarad on electronic components. The results of a series of tests investigating these effects on an N-channel MOSFET and a dielectrically isolated operational amplifier are presented. The devices were exposed to high temperatures and high total dose radiation and a simultaneous combination of these environments. For the MOSFET, temperature effects appear to be more detrimental than long-term radiation exposure, and that ''radiation burn in'' may be a viable way to provide uniform device response in a radiation environment. The operational amplifier had a flat temperature response from ambient to 125/sup 0/C, and minimal device parameter shifts with an accumulated dose of 100 Megarads (air).

Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
6446289
Report Number(s):
SAND-86-2719C; CONF-870575-1; ON: DE87006710
Resource Relation:
Conference: 39. National Aerospace and Electronics (NAECON) conference, Dayton, OH, USA, 18 May 1987; Other Information: Paper copy only, copy does not permit microfiche production
Country of Publication:
United States
Language:
English