Ionizing radiation induced leakage current on ultra-thin gate oxides
- Univ. di Padova (Italy). Dipt. di Elettronica e Informatica
- LPCS/ENSERG, Grenoble (France)
- SGS-Thomson Microelectronics, Agrate Brianza (Italy)
- CNR-FRAE, Bologna (Italy)
MOS capacitors with a 4.4 nm thick gate oxide have been exposed to {gamma} radiation from a Co{sup 60} source. As a result, the authors have measured a stable leakage current at fields lower than those required for Fowler-Nordheim tunneling. This Radiation Induced Leakage Current (RILC) is similar to the usual Stress Induced Leakage Currents (SILC) observed after electrical stresses of MOS devices. They have verified that these two currents share the same dependence on the oxide field, and the RILC contribution can be normalized to an equivalent injected charge for Constant Current Stresses. They have also considered the dependence of the RILC from the cumulative radiation dose, and from the applied bias during irradiation, suggesting a correlation between RILC and the distribution of trapped holes and neutral levels in the oxide layer.
- OSTI ID:
- 644176
- Report Number(s):
- CONF-970711--
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 44; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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