Protonic nonvolatile field effect transistor memories in Si/SiO{sub 2}/Si structures

Journal Article · Mon Dec 01 04:00:00 EST 1997 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.658944· OSTI ID:644173

Warren, W L; Fleetwood, D M; Schwank, J R ^[1]

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1. Sandia National Labs., Albuquerque, NM (United States); and others

A low-voltage, radiation-tolerant, nonvolatile field effect transistor (NVFET) memory involving proton motion in SiO{sub 2} is illustrated in both bulk Si and silicon-on-insulator devices. The authors discuss a mechanism by which the protons are created in the oxide layer by a forming gas anneal. At low temperature (T < 250 C), the H+ is largely imprisoned in the buried SiO{sub 2} layer; i.e., the ions are sandwiched between the two encapsulating Si layers. The Si layers can be either c-Si or poly-Si, thus the technology is compatible with standard Si processing. The protons can be reliably and controllably drifted from one interface to another without any noticeable degradation in the signal past 10{sup 6} cycles. Under an unbiased condition, the net proton density is not significantly affected by radiation up to at least 100 krad (SiO{sub 2}). Last, the authors compare many of the properties of the NVFET to commercial flash nonvolatile memories.

• Research Organization: Sandia National Laboratory
• Sponsoring Organization: Defense Advanced Research Projects Agency, Arlington, VA (United States); USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 644173
• Report Number(s): CONF-970711--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 44; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
COMPARATIVE EVALUATIONS
FIELD EFFECT TRANSISTORS
PHYSICAL RADIATION EFFECTS
PROTONS
SEMICONDUCTOR STORAGE DEVICES
SILICON
SILICON OXIDES