Determination of oxygen atomic positions in a Ga-In-Sn-O ceramic using direct methods and electron diffraction

Journal Article · Sat Feb 14 23:00:00 EST 1998 · Journal of Solid State Chemistry

DOI:https://doi.org/10.1006/jssc.1998.7804· OSTI ID:642206

Sinkler, W; Marks, L D; Edwards, D D; Mason, T O; Poeppelmeier, K R ^[1]; Hu, Z; Jorgensen, J D ^[2]

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1. Northwestern Univ., Evanston, IL (United States)
2. Argonne National Lab., IL (United States)

Direct methods using dynamical transmission electron diffraction (TED) intensities is applied to the solution of (Ga,In){sub 2}SnO{sub 5}. Dynamical diffraction effects in the TED data lead to an emphasis of oxygen positions in the structure. Application of direct methods to dynamical diffraction intensities represents a valuable new technique for obtaining approximate atom positions of light elements in ceramics using an experiment which is simple to perform and does not require a single crystal.

• Research Organization: Argonne National Laboratory (ANL), Argonne, IL
• Sponsoring Organization: National Science Foundation, Washington, DC (United States); USDOE, Washington, DC (United States)
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 642206
• Journal Information: Journal of Solid State Chemistry, Journal Name: Journal of Solid State Chemistry Journal Issue: 1 Vol. 136; ISSN 0022-4596; ISSN JSSCBI
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL STRUCTURE
ELECTRON DIFFRACTION
EXPERIMENTAL DATA
GALLIUM OXIDES
INDIUM OXIDES
OXYGEN
SPATIAL DISTRIBUTION
TIN OXIDES