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Title: Determination of pseudogap state density and carrier mobility in rf sputtered amorphous silicon. Final technical report, July 1, 1979-June 30, 1980

Abstract

The first objective is to determine whether field effect could be observed in samples of sputtered hydrogenated amorphous silicon, and, if it could, to compare the pseudogap density of states determined therefrom with estimates made by other methods of investigation. The second is to determine the drift mobility of excess carriers in these materials by time-of-flight, and to interpret its magnitude and temperature dependence in terms of current theories of transport in disordered semiconductors. The field effect has been observed, but the conditions required are such as to imply that deductions of the state density from it may not accurately represent the bulk density of states. In the course of this work a simpler method of reducing field effect data has been developed. The drift mobility has also been measured, but these experiments have not yet assembled sufficient statistics for final conclusions to be drawn from them.

Authors:
Publication Date:
Research Org.:
Harvard Univ., Cambridge, MA (USA). Div. of Applied Sciences
Sponsoring Org.:
USDOE
OSTI Identifier:
6419168
Report Number(s):
DOE/ET/23037-4
DOE Contract Number:  
AC03-79ET23037
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; SILICON; CARRIER MOBILITY; ENERGY-LEVEL DENSITY; AMORPHOUS STATE; CAPACITANCE; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; FREQUENCY DEPENDENCE; HYSTERESIS; IMPURITIES; ION MICROPROBE ANALYSIS; MASS SPECTROSCOPY; MIS TRANSISTORS; SCHOTTKY BARRIER DIODES; SPUTTERING; TIME DEPENDENCE; TIME-OF-FLIGHT METHOD; CHEMICAL ANALYSIS; ELECTRICAL PROPERTIES; ELEMENTS; MICROANALYSIS; MOBILITY; NONDESTRUCTIVE ANALYSIS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMIMETALS; SPECTROSCOPY; TRANSISTORS; 360603* - Materials- Properties; 140501 - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Paul, W. Determination of pseudogap state density and carrier mobility in rf sputtered amorphous silicon. Final technical report, July 1, 1979-June 30, 1980. United States: N. p., 1980. Web. doi:10.2172/6419168.
Paul, W. Determination of pseudogap state density and carrier mobility in rf sputtered amorphous silicon. Final technical report, July 1, 1979-June 30, 1980. United States. https://doi.org/10.2172/6419168
Paul, W. Mon . "Determination of pseudogap state density and carrier mobility in rf sputtered amorphous silicon. Final technical report, July 1, 1979-June 30, 1980". United States. https://doi.org/10.2172/6419168. https://www.osti.gov/servlets/purl/6419168.
@article{osti_6419168,
title = {Determination of pseudogap state density and carrier mobility in rf sputtered amorphous silicon. Final technical report, July 1, 1979-June 30, 1980},
author = {Paul, W},
abstractNote = {The first objective is to determine whether field effect could be observed in samples of sputtered hydrogenated amorphous silicon, and, if it could, to compare the pseudogap density of states determined therefrom with estimates made by other methods of investigation. The second is to determine the drift mobility of excess carriers in these materials by time-of-flight, and to interpret its magnitude and temperature dependence in terms of current theories of transport in disordered semiconductors. The field effect has been observed, but the conditions required are such as to imply that deductions of the state density from it may not accurately represent the bulk density of states. In the course of this work a simpler method of reducing field effect data has been developed. The drift mobility has also been measured, but these experiments have not yet assembled sufficient statistics for final conclusions to be drawn from them.},
doi = {10.2172/6419168},
url = {https://www.osti.gov/biblio/6419168}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1980},
month = {9}
}