Bandgap narrowing and emitter efficiency in heavily doped emitter structures revisited

Journal Article · Tue Jun 01 00:00:00 EDT 1993 · IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/16.214741· OSTI ID:6416559

Van Vliet, C M ^[1]

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1. Florida International Univ., Miami (United States)

The developments of heavy doping effects and of bandgap narrowing concepts (BGN) during the last two decades are critically discussed. The differences between the real bandgap reduction [Delta]E[sub g] and the apparent electrical bandgap reduction [Delta]G are once more set forth, showing the precise meaning of the density-of-states and degeneracy contributions to [Delta]G. From these concepts, previously elaborated by Marshak and Van Vilet and by Lundstrom et al., the authors indicated before that for negligible recombination the minority-carrier emitter current (J[sub pe]) is given by a Merten-type result. In this paper they show that in the presence of surface and (or) bulk recombination (Auger and SRH) the result of Selvakumar and Roulston is recovered; however, the electrical field in the emitter and the effective intrinsic density of carriers are not those used by these authors but, on the contrary, these quantities are given by the detailed expressions of their previous work.

• OSTI ID: 6416559
• Journal Information: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States), Vol. 40:6; ISSN 0018-9383
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
DOPED MATERIALS
ENERGY GAP
BAND THEORY
CARRIER MOBILITY
CHARGE CARRIERS
ELECTRIC FIELDS
ENERGY-LEVEL DENSITY
HOLES
RECOMBINATION
SOLAR CELLS
DIRECT ENERGY CONVERTERS
EQUIPMENT
MATERIALS
MOBILITY
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion