Tunable intersublevel transitions in self-forming semiconductor quantum dots

Journal Article · Sat Aug 01 00:00:00 EDT 1998 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.58.R4262· OSTI ID:641544

Leon, R ^[1]; Fafard, S; Piva, P G ^[2]; Ruvimov, S; Liliental-Weber, Z ^[3]

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1. Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91109-8099 (United States)
2. Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, K1A 0R6 (CANADA)
3. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

Interfacial compositional disordering in In{sub 0.6}Ga{sub 0.4}As/GaAs quantum dots has been used to tune their intersublevel energy spacings ({Delta}E{sub [(i+1){minus}i]}). Interdiffusion blueshifted all levels while lowering values for {Delta}E{sub [(i+1){minus}i]}. Rate equation simulations of photoluminescence (PL) spectra estimated relaxation lifetime ratios for intersublevel transitions. A slight trend towards increasing thermalization rates at values {Delta}E{sub [(i+1){minus}i]}{approximately}LO phonon energies was found. However, PL measurements showed strong emission from excited states for all {Delta}E{sub [(i+1){minus}i]} values, which ranged from 53 to 25 meV. {copyright} {ital 1998} {ital The American Physical Society}

• OSTI ID: 641544
• Journal Information: Physical Review, B: Condensed Matter, Vol. 58, Issue 8; Other Information: PBD: Aug 1998
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
EXCITED STATES
INDIUM COMPOUNDS
GALLIUM ARSENIDES
INDIUM ARSENIDES
PHOTOLUMINESCENCE
CHARGE CARRIERS
SUPERLATTICES
ENERGY-LEVEL TRANSITIONS
SEMICONDUCTOR MATERIALS
TUNING