Molecular beam epitaxial growth of tungsten layers embedded in single crystal gallium arsenide

Journal Article · Sun Dec 01 00:00:00 EST 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96322· OSTI ID:6409145

Harbison, J P; Hwang, D M; Levkoff, J; Derkits, Jr, G E

We have been able to fabricate structures which consist of a thin (approx.10 nm) polycrystalline W film embedded in surrounding single crystalline GaAs by molecular beam epitaxy (MBE) using an electron beam evaporation source to deposit W metal in an ultrahigh vacuum MBE growth chamber. The entire deposition sequence can take place at elevated temperature (625--700 /sup 0/C) due to the nonreactive nature of W with respect to GaAs. Reflective high-energy diffraction and transmission electron microscopy indicate that the single crystal GaAs overgrowth proceeds by seeding from the GaAs layer beneath the W through spontaneously occurring perforations in the W layer.

• Research Organization: Bell Communications Research, Murray Hill, New Jersey 07974
• OSTI ID: 6409145
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 47:11
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
VAPOR DEPOSITED COATINGS
TUNGSTEN
MOLECULAR BEAM EPITAXY
VACUUM COATING
CAVITIES
CRYSTAL STRUCTURE
ELECTRON DIFFRACTION
FABRICATION
MONOCRYSTALS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
ULTRAHIGH VACUUM
VERY HIGH TEMPERATURE
ARSENIC COMPOUNDS
ARSENIDES
COATINGS
COHERENT SCATTERING
CRYSTALS
DEPOSITION
DIFFRACTION
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
FILMS
GALLIUM COMPOUNDS
METALS
MICROSCOPY
PNICTIDES
SCATTERING
SURFACE COATING
TRANSITION ELEMENTS
360101* - Metals & Alloys- Preparation & Fabrication