Thin films of gallium arsenide on low-cost substrates. Quarterly project report No. 3, March 1, 1977-May 31, 1977
Efforts during this quarter have been directed to: (1) the deposition and characterization of gallium arsenide films on tungsten/graphite, graphite, and germanium (recrystallized)/tungsten/graphite substrates, and (2) the fabrication and characterization of gallium arsenide thin film solar cells. Gallium arsenide films deposited on tungsten/graphite substrates without intentional doping are p-type with net carrier concentrations of 5 x 10/sup 16/ to 10/sup 17/ cm/sup -3/. N-type films with net carrier concentrations of (1 to 3) x 10/sup 17/ cm/sup -3/ have been obtained by using hydrogen sulfide as a dopant. Efforts in obtaining ohmic contacts to these films by using several metals and alloys have not been successful due presumably to the surface oxide. Solar cells have been prepared by using gold as a surface barrier, and AMl efficiencies of up to 2.8% have been obtained for cells of 8 cm/sup 2/ area. This type of solar cell appears to be promising because of its simplicity in fabrication. Gallium arsenide films deposited on graphite substrates were found to have high interface resistance, and solar cells have very low fill factors. A five-zone furnace has been constructed for the deposition of zinc-doped gallium arsenide films. Solar cells have been prepared from gallium arsenide films deposited on germanium (recrystallized)/tungsten/graphite substrates; however, their characteristics are poor.
- Research Organization:
- Southern Methodist Univ., Dallas, TX (USA)
- DOE Contract Number:
- AC03-76SF01284
- OSTI ID:
- 6408019
- Report Number(s):
- DOE/SF/01284-T1; ON: DE81023595
- Country of Publication:
- United States
- Language:
- English
Similar Records
Thin films of gallium arsenide on low-cost substrates. Quarterly project report No. 2, December 1, 1976--February 28, 1977
Gallium arsenide thin films on tungsten/graphite substrates. Phase II. Quarterly project report No. 1, September 1-November 30, 1977
Related Subjects
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ARSENIC COMPOUNDS
ARSENIDES
CARBON
CARRIER DENSITY
CHALCOGENIDES
CRYSTAL DOPING
DATA
DEPOSITION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
EXPERIMENTAL DATA
FABRICATION
FILL FACTORS
FILMS
FURNACES
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GERMANIUM
GOLD
GRAPHITE
HYDROGEN COMPOUNDS
HYDROGEN SULFIDES
INFORMATION
MATERIALS
METALS
N-TYPE CONDUCTORS
NONMETALS
NUMERICAL DATA
P-TYPE CONDUCTORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PNICTIDES
REFRACTORY METALS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
SUBSTRATES
SULFIDES
SULFUR COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN
ZINC