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Title: Polymethyl methacrylate sensitivity variation versus the electronic stopping power at ion lithography exposure

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.92244· OSTI ID:6404758

Experimental data for the minimum ion dose D/sub 0/ during exposure and for the contrast parameter g are presented. A dependence of D/sub 0/ on the electronic stopping power but no correlation between D/sub 0/ and nuclear stopping power is found. An analogical dependence on minimum absorbed electronic stopping energy density is also found. The absorbed energy density for H/sup +/ ions is comparable with X-ray lithography data but heavier ions are more effective. For the understanding of these relations an electron excitation spike mechanism is suggested. From the non-Rutherford backscattering experiments at 1.7--1.75 MeV the energy losses of protons in polymethyl methacrylate are found to be 25 eV/nm.

Research Organization:
Research Institute of Physics, S-104 05 Stockholm 50, Sweden
OSTI ID:
6404758
Journal Information:
Appl. Phys. Lett.; (United States), Vol. 38:12
Country of Publication:
United States
Language:
English