Polymethyl methacrylate sensitivity variation versus the electronic stopping power at ion lithography exposure
Experimental data for the minimum ion dose D/sub 0/ during exposure and for the contrast parameter g are presented. A dependence of D/sub 0/ on the electronic stopping power but no correlation between D/sub 0/ and nuclear stopping power is found. An analogical dependence on minimum absorbed electronic stopping energy density is also found. The absorbed energy density for H/sup +/ ions is comparable with X-ray lithography data but heavier ions are more effective. For the understanding of these relations an electron excitation spike mechanism is suggested. From the non-Rutherford backscattering experiments at 1.7--1.75 MeV the energy losses of protons in polymethyl methacrylate are found to be 25 eV/nm.
- Research Organization:
- Research Institute of Physics, S-104 05 Stockholm 50, Sweden
- OSTI ID:
- 6404758
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 38:12
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
HEAVY IONS
STOPPING POWER
HYDROGEN IONS
METHYL METHACRYLATE
CHARGED-PARTICLE TRANSPORT
ABSORPTION
BACKSCATTERING
CORRELATIONS
DATA
ENERGY DENSITY
ENERGY LOSSES
EXCITATION
MATHEMATICAL MODELS
POLYMERS
PROTONS
SENSITIVITY
VARIATIONS
X RADIATION
BARYONS
CARBOXYLIC ACID ESTERS
CHARGED PARTICLES
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
ENERGY-LEVEL TRANSITIONS
ESTERS
FERMIONS
HADRONS
INFORMATION
IONIZING RADIATIONS
IONS
LOSSES
METHACRYLIC ACID ESTERS
NUCLEONS
ORGANIC COMPOUNDS
RADIATION TRANSPORT
RADIATIONS
SCATTERING
654001* - Radiation & Shielding Physics- Radiation Physics
Shielding Calculations & Experiments