Recombination lasing in heliumlike silicon

Journal Article · Sat Oct 01 04:00:00 EDT 1988 · IEEE Trans. Plasma Sci.; (United States)

DOI:https://doi.org/10.1109/27.8960· OSTI ID:6403824

Apruzese, J P; Kepple, P C; Davis, J ^[1]; Pender, J ^[2]

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1. Plasma Radiation Branch, Plasma Physics Div., Naval Research Lab., Washington, DC (US)
2. Berkeley Research Associates, Inc., Springfield, VA (US)

A major goal of current X-ray laser research is the achievement of gain in the 23.3 A-43.7 A wavelength region, known as the ''water window.'' Silicon is the lowest atomic number element for which all the heliumlike 3-2 transitions lie in this region. The authors examine the fundamental kinetics of recombination lasing in this species and conclude that the Si XIII 1s3d/sup 1/D/sub 2/-1s2rho/sup 1/P/sub 1/ line at 39.1 A is an attractive candidate for recombination-pumped lasing. Attainment of gain in this line is somewhat more energetically favorable than for the hydrogenic Al XIII 3-2 transitions, but radiative trapping may be somewhat more troublesome than for H-like Al.

• OSTI ID: 6403824
• Journal Information: IEEE Trans. Plasma Sci.; (United States), Journal Name: IEEE Trans. Plasma Sci.; (United States) Vol. 16:5; ISSN ITPSB
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
700103 -- Fusion Energy-- Plasma Research-- Kinetics
AMPLIFICATION
ELEMENTS
GAIN
KINETICS
LASERS
RECOMBINATION
RESEARCH PROGRAMS
SEMIMETALS
SILICON
WAVELENGTHS
X-RAY LASERS