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Influence of phase separation on electron mobility in high-purity Ga[sub [ital x]]In[sub 1[minus][ital x]]As[sub [ital y]]P[sub 1[minus][ital y]] (0[le][ital y][le]1)

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.110372· OSTI ID:6399977
 [1];  [2]
  1. Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)
  2. Institut fuer Festkoerperphysik, Technische Universitaet Berlin, 1000 Berlin 12 (Germany)
A strong contribution of the phase separation to the alloy scattering potential is determined for the first time in the composition range from [ital y]=0.4 to [ital y]=1.0 in high-purity Ga[sub [ital x]]In[sub 1[minus][ital x]]As[sub [ital y]]P[sub 1[minus][ital y]] alloys. The composition fluctuation leads to a sharp increase in the alloy scattering potential at [ital y]=0.7, in perfect agreement with yet unexplained experimental electron mobility determinations.
OSTI ID:
6399977
Journal Information:
Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 63:2; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English