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Title: Mechanism of incipient oxidation of bulk chemical vapor deposited Si[sub 3]N[sub 4]

Journal Article · · Journal of the Electrochemical Society; (United States)
DOI:https://doi.org/10.1149/1.2056154· OSTI ID:6399054
 [1];  [2]
  1. NASA, Cleveland, OH (United States) Sverdrup Technology Inc., Cleveland, OH (United States)
  2. NASA, Cleveland, OH (United States) Case Western Reserve Univ., Cleveland, OH (United States)

X-ray photoelectron spectroscopy was employed, in conjunction with ion bombardment, to analyze the chemical composition profile across thin (< 50 nm) oxide films on chemically vapor deposited Si[sub 3]N[sub 4]. The thermal oxides were grown in dry oxygen at 1,100 C on samples with or without native oxide film (formed in room air). The results show that the thermal oxidation product was silicon oxynitride of graded N:O ratio, and that the presence of a native oxide film promoters the formation of a SiO[sub 2] crust over the oxynitride. It is proposed that the fundamental mechanism of Si[sub 3]N[sub 4] oxidation is progressive O-for-N substitution in the silicon oxynitride unit tetrahedron, which is best designated SiN[sub 2[minus]x]O[sub 2+x], where x is also an index of depth. The corresponding equation for nonstoichiometric oxidation of Si[sub 3]N[sub 4] describes a bulk (rather than an interface) reaction process, with significant implications for O[sub 2] and N[sub 2] fluxes and diffusivities.

OSTI ID:
6399054
Journal Information:
Journal of the Electrochemical Society; (United States), Vol. 140:3; ISSN 0013-4651
Country of Publication:
United States
Language:
English