Microstructural mechanisms that enhance electromigration resistance in Al--Cu thin films
Evolution of the microstructure of Al-2wt.%Cu thin films is examined with respect to how the presence of copper can influence electromigration behavior. After an anneal that simulates a thin film sintering step, the microstructure of the Al-Cu films consisted of 1 [mu]m aluminum grains with [theta]-phase A1[sub 2]Cu precipitates at grain boundaries and triple points. The grain size and precipitation distribution did not change with subsequent heat treatments. Upon cooling to room temperature the heat treatment of the films near the Al/Al+[theta] solvus temperature results in depletion of copper at the aluminum grain boundaries. Heat treatments lower in the two phase region (200 to 300C) result in enrichment of copper at the aluminum grain boundaries. Here, it is proposed that electromigration behavior of aluminum is improved by adding copper because the copper enrichment in the form of A1[sub 2]Cu phase may hinder aluminum diffusion along the grain boundaries.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6395338
- Report Number(s):
- SAND-93-1013C; CONF-930405-8; ON: DE93013770
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society, San Francisco, CA (United States), 12-16 Apr 1993
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ALUMINIUM
ELECTROPHORESIS
ALUMINIUM BASE ALLOYS
COPPER ALLOYS
DIFFUSION
ELECTRIC CONTACTS
GRAIN BOUNDARIES
HEAT TREATMENTS
INTEGRATED CIRCUITS
MICROSTRUCTURE
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
ALLOYS
ALUMINIUM ALLOYS
CRYSTAL STRUCTURE
ELECTRICAL EQUIPMENT
ELECTRON MICROSCOPY
ELECTRONIC CIRCUITS
ELEMENTS
EQUIPMENT
FILMS
METALS
MICROELECTRONIC CIRCUITS
MICROSCOPY
360104* - Metals & Alloys- Physical Properties