The effects of electron-hole Coulomb interaction in semiconductor lasers

Journal Article · Fri Jun 01 00:00:00 EDT 1990 · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/3.108100· OSTI ID:6379668

Chow, W W ^[1]; Sargent, M III; Koch, S W ^[2]

---

1. Sandia National Lab., Albuquerque, NM (US)
2. Optical Science Center, Univ. of Arizona, Tucson, AZ (US)

This paper applies a recent many-body theory to investigate the corrections to semiconductor laser gain and carrier-induced refractive index. The authors results show nonnegligible modifications to these quantities and demonstrate the importance of band-gap renormalization and Coulomb enhancement. The influence of the many-body Coulomb effects on filamentation effects in semiconductor lasers is investigated.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6379668
• Journal Information: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA) Vol. 26:6; ISSN 0018-9197; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
640302 -- Atomic
Molecular & Chemical Physics-- Atomic & Molecular Properties & Theory
74 ATOMIC AND MOLECULAR PHYSICS
AMPLIFICATION
CARRIER MOBILITY
COULOMB EXCITATION
ELECTRON-HOLE COUPLING
ENERGY-LEVEL TRANSITIONS
EXCITATION
GAIN
LASERS
MANY-BODY PROBLEM
MOBILITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS