Electrical and optical properties of thin Ta and W oxide films produced by reactive direct current magnetron sputtering
Reactively sputtered thin metal oxide films are used in the production of some electro-optic devices. To design and engineer such devices, knowledge of the physical characteristics of these films is essential. Investigations of the resistivity, reflection, and transmission properties of WO/sub x/ and Ta/sub x/O/sub y/ thin films were done under a wide range of sputtering conditions. Reactive sputtering rates were determined for base argon pressures from 2.5 to 20 mTorr, O/sub 2/ partial pressures from 0.5% to 50%, and power level from 2 to 8 kW. The maximum power density achieved was 34 W/cm/sup 2/. Film thicknesses varied from 30 to 250 nm and were measured by a mechanical surface profile technique. Reflection and transmission characteristics and the corresponding optical constants were obtained from UV, visible, and near-infrared spectrophotometric scans of the films. The resistivities of the films were also measured, and they ranged from 10/sup 1/ to 10/sup 8/ ..cap omega.. cm. The measured physical properties of these thin films were then related to the sputtering process parameters. Comparisons to corresponding evaporated metal oxide thin films indicate the differences in optical properties and resistivities.
- Research Organization:
- Donnelly Corp., Holland, Michigan 49423
- OSTI ID:
- 6370352
- Journal Information:
- J. Vac. Sci. Technol., A; (United States), Vol. 5:4
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
TANTALUM OXIDES
ELECTRICAL PROPERTIES
ELECTRO-OPTICAL EFFECTS
OPTICAL PROPERTIES
SPUTTERING
TUNGSTEN OXIDES
LIGHT TRANSMISSION
THIN FILMS
CHALCOGENIDES
FILMS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
REFRACTORY METAL COMPOUNDS
TANTALUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
TUNGSTEN COMPOUNDS
360204* - Ceramics
Cermets
& Refractories- Physical Properties